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Transition between strong and weak topological insulator in ZrTe$_5$ and HfTe$_5$

机译:ZrTe $ _5 $和$中的强弱拓扑绝缘体之间的过渡   HfTe $ $ _5

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摘要

ZrTe$_5$ and HfTe$_5$ have attracted increasingly attention recently sincethe theoretical prediction of being topological insulators (TIs). However,subsequent works show many contradictions about their topological nature.Threepossible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have beenobserved in different experiments until now. Essentially whether ZrTe$_5$ orHfTe$_5$ has a band gap or not is still a question. Here, we present detailedfirst-principles calculations on the electronic and topological properties ofZrTe$_5$ and HfTe$_5$ on variant volumes and clearly demonstrate thetopological phase transition from a strong TI, going through an intermediateDirac semi-metal phase, then to a weak TI when the crystal expands.Our workmight give a unified explain about the divergent experimental results andpropose the crucial clue to further experiments to elucidate the topologicalnature of these materials.
机译:自从理论上预测为拓扑绝缘体(TIs)以来,ZrTe__5 $和HfTe $ _5 $引起了越来越多的关注。然而,随后的工作在拓扑性质上存在许多矛盾。迄今为止,在不同的实验中已经观察到强钛,弱钛和狄拉克半金属这三个可能的阶段。从本质上讲ZrTe $ _5 $或HfTe $ _5 $是否存在带隙仍然是一个问题。在这里,我们介绍了有关ZrTe $ _5 $和HfTe $ _5 $在变体量上的电子和拓扑性质的详细第一性原理计算,并清楚地证明了拓扑相从强TI过渡到中间狄拉克半金属相,然后变为弱相。晶体膨胀时的TI。我们的工作可能会统一解释不同的实验结果,并为进一步实验阐明这些材料的拓扑性质提供关键线索。

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